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NGB8204N Ignition IGBT 18 Amps, 400 Volts
N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V
C
* Ideal for Coil-on-Plug Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * * * * *
Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capability Pb-Free Package is Available
G RGE
E D2PAK CASE 418B STYLE 4
1
MARKING DIAGRAM
4 Collector GB 8204NG AYWW 1 Gate GB8204N A Y WW G 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb-Free Package
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD ESD PD TJ, Tstg Value 430 430 18 18 50 8.0 800 115 0.77 -55 to +175 Unit VDC VDC VDC ADC AAC kV V W W/C C
ORDERING INFORMATION
Device NGB8204NT4 NGB8204NT4G Package D2PAK D2PAK (Pb-Free) Shipping 800 / Tape & Reel 800 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
August, 2006 - Rev. 3
1
Publication Order Number: NGB8204N/D
NGB8204N
UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C)
Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C MAXIMUM SHORT-CIRCUIT TIMES (-55C TJ 150C) Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc1 tsc2 750 5.0 ms ms Symbol EAS Value 400 300 2000 Unit mJ
EAS(R)
mJ
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient D2PAK (Note 1) Symbol RqJC RqJA TL Value 1.3 50 275 Unit C/W C/W C
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES ICES VCE = 350 V, VGE = 0 V Reverse Collector-Emitter Leakage Current IECS VCE = -24 V BVCES(R) IC = -75 mA BVGES IGES RGE VGE(th) IG = 5.0 mA VGE = 10 V - IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C Reverse Collector-Emitter Clamp Voltage TJ = 25C TJ = 150C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE - TJ = 25C TJ = 150C TJ = -40C Threshold Temperature Coefficient (Negative) - - 1.1 0.75 1.2 - 1.4 1.0 1.6 3.4 1.9 1.4 2.1* - mV/C VDC TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 390 - - - - - - 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 16 420 430 10 40* 10 1.0 25* 1.0 37 40 35 15 700 26 VDC mADC
kW
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit VDC mADC
mA
VDC
*Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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NGB8204N
ELECTRICAL CHARACTERISTICS
Characteristic ON CHARACTERISTICS (Note 3) Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = -40C to 150C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 8.0 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 14 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.0 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 25 Mhos VDC Symbol Test Conditions Temperature Min Typ Max Unit
IC = 8.0 A, VGE = 4.0 V
IC = 10 A, VGE = 4.0 V
IC = 15 A, VGE = 4.0 V
IC = 10 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time td(off) tf td(on) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W CISS COSS CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz gfs VCE = 5.0 V, IC = 6.0 A
TJ = -40C to 150C
400 50 4.0
800 75 7.0 4.0 9.0 0.7
1000 100 10 10 15 4.0
pF
TJ = 25C TJ = 25C TJ = 25C
- - -
mSec
mSec
Rise Time
tr
TJ = 25C
-
4.5
7.0
*Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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NGB8204N
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60 50 40 30 20 3V 10 0 2.5 V 0 1 3 5 7 2 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 TJ = 25C 60 50 4.5 V 40 TJ = -40C 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V 3.5 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VGE = 10 V 5V 4.5 V 4V 3.5 V
VGE = 10 V
5V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (AMPS)
VGE = 10 V 5V
IC, COLLECTOR CURRENT (AMPS)
60 50 40 TJ = 150C 30 20 10 0
60 55 50 45 40 35 30 25 20 15 10 5 0 TJ = 25C VCE = 10 V TJ = -40C TJ = 150C
4.5 V 4V 3.5 V 3V 2.5 V
0
2 4 6 1 3 5 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
8
0
1
2
3
4
5
6
7
8
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 VGE = 5 V IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 5 A 3 2.5
Figure 4. Transfer Characteristics
COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25C IC = 15 A
2 1.5 1 0.5 0
IC = 10 A IC = 5 A
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (C)
GATE-TO-EMITTER VOLTAGE (V)
Figure 5. Collector-to-Emitter Saturation Voltage versus Junction Temperature
Figure 6. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage
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NGB8204N
3 COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2 1.5 1 0.5 0 IC = 15 A IC = 10 A IC = 5 A TJ = 150C 10000 1000 100 10 1 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (V) Ciss
C, CAPACITANCE (pF)
Coss Crss
0
20
40
60
80
100 120
140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage
Figure 8. Capacitance Variation
2 GATE THRESHOLD VOLTAGE (V) IL, LATCH CURRENT (AMPS) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 30 50 70 90 110 130 150 VTH + 4 s VTH - 4 s VTH
30 25 20 15 10 5 0 -50 -25 L = 2 mH VCC = 50 V VGE = 5.0 V RG = 1000 W
L = 3 mH L = 6 mH
0
25
50
75
100
125
150 175
TEMPERATURE (C)
TEMPERATURE (C)
Figure 9. Gate Threshold Voltage versus Temperature
Figure 10. Minimum Open Secondary Latch Current versus Temperature
30 IL, LATCH CURRENT (AMPS) 25 L = 2 mH 20 15 10 5 0 -50 -25 L = 3 mH L = 6 mH VCC = 50 V VGE = 5.0 V RG = 1000 W
12 10 SWITCHING TIME (ms) 8 6 td(off) 4 2 0 -50 -30 -10 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH
tf
0
25
50
75
100
125
150
175
10
30
50
70
90
110 130 150
TEMPERATURE (C)
TEMPERATURE (C)
Figure 11. Typical Open Secondary Latch Current versus Temperature
Figure 12. Inductive Switching Fall Time versus Temperature
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NGB8204N
100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 1 ms 10 ms 0.1 100 ms COLLECTOR CURRENT (AMPS) 100
10 DC
1
100 ms 1 ms 10 ms
0.1
100 ms
0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (V)
0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (V)
Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C)
Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C)
100 COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30
100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1
10
1
0.1
0.1
0.01
1
10
100
1000
0.01
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C)
Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C)
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NGB8204N
VBATT = 16 V VBATT = 16 V
RL = 0.1 W
RL = 0.1 W
L = 10 mH L = 10 mH 5.0 V
5.0 V
VIN
RG = 1 kW
VIN
RG = 1 kW
RS = 55 mW
Figure 17. Circuit Configuration for Short Circuit Test #1
Figure 18. Circuit Configuration for Short Circuit Test #2
100 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt)
Duty Cycle = 0.5 0.2 0.1 0.05 0.02
10
1
0.01
0.1
0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) RqJC @ R(t) for t 0.2 s
0.001
0.0001
0.00001
0.0001
0.001 t,TIME (S)
0.01
0.1
1
Figure 19. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area)
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NGB8204N
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE J
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
1
2
3
S
A
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) P H
M
J
W
TB
M
U L M
STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
SOLDERING FOOTPRINT*
8.38 0.33
F VIEW W-W 10.66 0.42 1.016 0.04 5.08 0.20
17.02 0.67
3.05 0.12
mm inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NGB8204N/D

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